RENESAS 2SC5508 NE662M04 РЧ биполярные транзисторы

RENESAS 2SC5508 NE662M04 РЧ биполярные транзисторы

Особенности

• Ideal for low-noise, high-gain amplification applications

• NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

• Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

• fT = 25 GHz technology adopted

• Flat-lead 4-pin thin-type super minimold (M04) package

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