SI8417DB

 

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SI8417DB - P-Channel 1.8-V (G-S) MOSFET

 

 

 

CHARACTERISTICS 

  P-Channel Vertical DMOS 

  Macro Model (Subcircuit Model) 

  Level 3 MOS 

  Apply for both Linear and Switching Application

  Accurate over the −55 to 125°C Temperature Range

  Model the Gate Charge, Transient, and Diode Reverse Recovery 

Characteristics

 

 

 

DESCRIPTION  

The attached spice model describes the typical electrical 

characteristics of the p-channel vertical DMOS.  The subcircuit 

model is extracted and optimized over the  −55 to 125°C 

temperature ranges under the pulsed 0-V to 5-V gate drive. The 

saturated output impedance is best fit at the gate bias near the 

threshold voltage. 

 

 

A novel gate-to-drain feedback capacitance network is used to model 

the gate charge characteristics while avoiding convergence difficulties 

of the switched Cgd model.  All model parameter values are optimized 

to provide a best fit to the measured electrical data and are not 

intended as an exact physical interpretation of the device. 

 

 

 

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