MRF151G

MRF151 MRF151G --  RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Features 

Guaranteed Performance at 175 MHz, 50 V: 

• Output Power — 300 W 

• Gain — 14 dB (16 dB Typ) 

• Efficiency — 50% 

• Low Thermal Resistance — 0.35°C/W 

• Ruggedness Tested at Rated Output Power 

• Nitride Passivated Die for Enhanced Reliability 

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